ULSI Devices

C.Y. Chang, Simon M. Sze

728 pages, parution le 15/04/2000

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Résumé

Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices. has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the bestknown researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:

The physics and operational characteristics of the different components
The evolution of device structures
The ultimate limitations on device and circuit performance
Device miniaturization and simulation
Issues of reliability and the hot carrier effect
Digital and analog circuit building blocks

Table of contents

Chapter 1: Bipolar Transistor Fundamentals (E Kaspter)
Chapter 2: MOSFET Fundamentals (P Wong)
Chapter 3: Device Miniaturization and Simulation (B Streetman & S Banerjee)
Chapter 4: SOI and 3D Structure (J Colinge)
Chapter 5: Device Reliability: The Hot Carrier Effect (B Doyle)
Chapter 6: DRAM and SRAM (S Shichijo)
Chapter 7: Nonvolatile Memory (J Caywood)
Chapter 8: CMOS Digital and Analog Building Block Circuits for Mixed-Signal Application (D Pehlke & F Chang)
Chapter 9: Low-Power/Low-Voltage/High-Speed Operation (I Chen & W Liu)
Chapter 10: System-on-Chip Concepts (M Pelgrom)
Appendices
Index

L'auteur - Simon M. Sze

Simon M. Sze, Ph.D. is UMC Chair Professor of National Chiao Tung University, and President of the National Nano Device Laboratories. He has received the IEEE Ebers Award, the Sun Yet-sen Award, the National Science and Technology Award, and the National Chair Professor Award. He is a Life Fellow of IEEE, a member of the Academia Sinica, the Chinese Academy of Engineering, and the US National Academy of Engineering. He has authored or coauthored over 150 technical papers, and has written, edited, and contributed to 24 books. His book Physics of Semiconductor Devices (Wiley 1969, 2nd Ed, 1981) is the most cited work in contemporary engineering and applied science publications (over 12,000 citations from ISI Press).

Caractéristiques techniques

	PAPIER
Éditeur(s)	Wiley
Auteur(s)	C.Y. Chang, Simon M. Sze
Parution	15/04/2000
Nb. de pages	728
Format	16 x 24,3
Couverture	Relié
Poids	1150g
EAN13	9780471240679

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ULSI Devices

Résumé

L'auteur - Simon M. Sze

Caractéristiques techniques

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