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Physics and applications of semiconductor quantum structures
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Physics and applications of semiconductor quantum structures

Physics and applications of semiconductor quantum structures

J.-C. Woo, T. Yao

483 pages, parution le 01/05/2001

Résumé

This book brings together papers presented by invited speakers at the International Workshop on Physics and Applications of Semiconductor Quantum Structures (October 18-23, 1998, Cheju Island, Korea), and covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, it explores fabrication and characterization techniques; transport, optical, and spin dependent properties; and concludes with a section devoted to new device applications.

Contents

  • Preface
  • 1 The evolution of semiconductor superlattices and quantum nanostructures 3
  • 2 Formation and characterization of semiconductor nanostructures 13
  • 3 New quantum wire and quantum dot structures by selective MBE on patterned high-index substrates 65
  • 4 New fabrication techniques and optical properties of GaN and Si quantum dots 75
  • 5 Dislocation filtering techniques for MBE large mismatched heteroepitaxy 88
  • 6 Growth of widegap II-VI quantum structures and their optical properties 106
  • 7 Theory of quantum transport in mesoscopic systems: antidot lattices 141
  • 8 Edge states in magnetic quantum structures and composite fermion systems 178
  • 9 Electronic states in circular and ellipsoidally deformed quantum dots 194
  • 10 Electron-hole and exciton systems in low dimensions 219
  • 11 Size quantization and electron dynamics in nanometre-size semiconductors 253
  • 12 Electronic properties of InAs/GaAs quantum dots 273
  • 13 Graded and coupled quantum wells for emission of radiation by intersubband emission 300
  • 14 Spin-dependent properties of magnetic III-V semiconductors 337
  • 15 Zeeman separation in GaAs quantum structures 355
  • 16 Self-assembling of silicon quantum dots and its application to novel nanodevices 371
  • 17 Quantum devices based on III-V compound semiconductors 387
  • 18 Quantum interference in corrugated conducting wire transistors 433
  • 19 Non-Markovian optical gain of strained-layer quantum-well lasers with many-body effects 452
  • 20 Generation of non-classical lights from semiconductor light emitters 465

Caractéristiques techniques

  PAPIER
Éditeur(s) Institute of Physics (IOP)
Auteur(s) J.-C. Woo, T. Yao
Parution 01/05/2001
Nb. de pages 483
Format 16 x 24
Couverture Relié
Poids 1005g
Intérieur Noir et Blanc
EAN13 9780750306379

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