Optoelectronic Properities of Semiconductors and Superlattices

III-Nitride Semiconductors: Growth. Vol. 19

M.O. Manasreh, Ian T. Ferguson, Collectif d'auteurs

682 pages, parution le 30/01/2003

Ajouter à une liste

Indisponible

Résumé

Ill-Nitride Semiconductor Materials: Growth is focused on the growth techniques for Ill-nitrides featuring chapters written by experts in the field. This book provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulates to further advances for experienced researchers.

The technical chapters in Ill-Nitride Semiconductor Materials: Growth are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.

Contents

Reduction of Dislocation Density in GaN Films Formed by Epitaxial Lateral Overgrowth
Lateral and Pendo-Epitaxial Growth and Characterization of Thin Films of GaN and AIGaN Alloys on SIC(0001) and Si(111) Substrates
Spatially Resolved Optical Characterization of GaN Structures Produced by Selective Area Epitaxy and Epitaxial Lateral Overgrowth
Selective Area Growth of Gallium Nitride on α-AI2O3 and Si Substrates Using Oxidized AlAs
Homoepitaxial and Heteroepitaxial MOVPE Growth of GaN
Hydride Vapour Phase Epitaxial Growth of Thick GaN Layers
Growth Modes and Strain Relaxation Mechanisms of Nitrides in Molecular Beam Epitaxy: From 2D to 3D Growth Mode
Molecular Beam Epitaxy of Group-III Nitrides
"Growth and Characterization of MBE-grown Cubic GaN, InxGa1-xN and AIyGa1-yN"
Growth of III-V Nitrides by Pulsed Laser Deposition
Influence of the Growth Mode on the physical Properties of GaN Grown by MetalOrganic Vapor Phase Epitaxy
Epitaxial Growth and Characterization of GaN-based Nitrides and Related Devices on Silicon Substrates
Metalorganic Vapor Phase Change Epitaxy Grown Hexagonal GaN and AIGaN for UV-Visible-Blind Photodetector Device Applications
Epitaxial Growth of Wurtzite GaN and Ternary Compounds

L'auteur - Collectif d'auteurs

Autres livres de Collectif d'auteurs

Daniel Buren, mot à mot

Familles. Permanence et métamorphoses

Architecture studio

Structuration et management des organisations

Découvrir tous les livres de Collectif d'auteurs

Caractéristiques techniques

	PAPIER
Éditeur(s)	Taylor and Francis Books
Auteur(s)	M.O. Manasreh, Ian T. Ferguson, Collectif d'auteurs
Parution	30/01/2003
Nb. de pages	682
Format	15,7 x 23,5
Couverture	Relié
Poids	1054g
Intérieur	Noir et Blanc
EAN13	9781560329954