Déjà client ? Identifiez-vous

Mot de passe oublié ?

Nouveau client ?

CRÉER VOTRE COMPTE
Complete Guide to Semiconductor Devices
Ajouter à une liste

Librairie Eyrolles - Paris 5e
Indisponible

Complete Guide to Semiconductor Devices

Complete Guide to Semiconductor Devices

Kwok K. Ng

576 pages, parution le 22/08/2002

Résumé

A definitive and up-to-date handbook of semiconductor devices
Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices.
As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences.

  • Essential information is presented for a quick, balanced overview
  • Each chapter is designed to cover only one specific device, for easy and focused reference
  • Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications
The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry.
Contents
  • 1 p-n Junction Diode
  • 2 p-i-n Diode
  • 3 Schottky-Barrier Diode
  • 4 Planar-Doped-Barrier (PDB) Diode
  • 5 Isotype Heterojunction
  • 6 Tunnel Diode
  • 7 Transferred-Electron Device (TED)
  • 8 Resonant-Tunneling Diode
  • 9 Resonant-Interband-Tunneling (RIT) Diode
  • 10 Single-Barrier Tunnel Diode
  • 11 Single-Barrier Interband-Tunneling Diode
  • 12 Real-Space-Transfer (RST) Diode
  • 13 Metal-Insulator-Semiconductor Switch (MISS)
  • 14 Planar-Doped-Barrier (PDB) Switch
  • 15 Amorphous Threshold Switch
  • 16 Heterostructure Hot-Electron Diode (HHED)
  • 17 Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode
  • 18 Barrier-Injection Transit-Time (BARITT) Diode
  • 19 Resistor
  • 20 Metal-Oxide-Semiconductor (MOS) Capacitor
  • 21 Charge-Coupled Device (CCD)
  • 22 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
  • 23 Junction Field-Effect Transistor (JFET)
  • 24 Metal-Semiconductor Field-Effect Transistor (MESFET)
  • 25 Modulation-Doped Field-Effect Transistor (MODFET)
  • 26 Permeable-Base Transistor
  • 27 Static-Induction Transistor (SIT)
  • 28 Real-Space-Transfer (RST) Transistor
  • 29 Planar-Doped Field-Effect Transistor
  • 30 Surface-Tunnel Transistor
  • 31 Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET)
  • 32 Stark-Effect Transistor
  • 33 Velocity-Modulation Transistor (VMT)
  • 34 Bipolar Transistor
  • 35 Tunneling Hot-Electron-Transfer Amplifier (THETA)
  • 36 Metal-Base Transistor
  • 37 Bipolar Inversion-Channel Field-Effect Transistor (BICFET)
  • 38 Tunnel-Emitter Transistor (TETRAN)
  • 39 Planar-Doped-Barrier (PDB) Transistor
  • 40 Heterojunction Hot-Electron Transistor (HHET)
  • 41 Induced-Base Transistor
  • 42 Resonant-Tunneling Bipolar Transistor (RTBT/RBT)
  • 43 Resonant-Tunneling Hot-Electron Transistor (RHET)
  • 44 Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT)
  • 45 Spin-Valve Transistor
  • 46 Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor
  • 47 Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor
  • 48 Silicon-Controlled Rectifier (SCR)
  • 49 Insulated-Gate Bipolar Transistor (IGBT)
  • 50 Static-Induction Thyristor (SIThy)
  • 51 Unijunction Transistor
  • 52 Light-Emitting Diode (LED)
  • 53 Injection Laser
  • 54 Photoconductor
  • 55 p-i-n Photodiode
  • 56 Schottky-Barrier Photodiode
  • 57 Charge-Coupled Image Sensor (CCIS)
  • 58 Avalanche Photodiode (APD)
  • 59 Phototransistor
  • 60 Metal-Semiconductor-Metal (MSM) Photodetector
  • 61 Quantum-Well Infrared Photodetector (QWIP)
  • 62 Quantum-Dot Infrared Photodetector (QDIP)
  • 63 Blocked-Impurity-Band (BIB) Photodetector
  • 64 Negative-Electron-Affinity (NEA) Photocathode
  • 65 Photon-Drag Detector
  • 66 Self-Electrooptic-Effect Device (SEED)
  • 67 Bistable Etalon
  • 68 Solar Cell
  • 69 Electroabsorption Modulator
  • 70 Thermistor
  • 71 Hall Plate
  • 72 Strain Gauge (Gage)
  • 73 Interdigital Transducer (IDT)
  • 74 Ion-Sensitive Field-Effect Transistor (ISFET)
  • App. A Selected Nonsemiconductor Devices
  • App. B Physical Phenomena
  • App. C General Applications of Device Groups
  • App. D Physical Properties
  • App. E: Background Information

L'auteur - Kwok K. Ng

Agere Systems
Murray Hill, New Jersey

Caractéristiques techniques

  PAPIER
Éditeur(s) Wiley
Auteur(s) Kwok K. Ng
Parution 22/08/2002
Nb. de pages 576
Format 16 x 24
Couverture Broché
Poids 1185g
Intérieur Noir et Blanc
EAN13 9780471202400
ISBN13 978-0-471-20240-0

Avantages Eyrolles.com

Livraison à partir de 0,01 en France métropolitaine
Paiement en ligne SÉCURISÉ
Livraison dans le monde
Retour sous 15 jours
+ d'un million et demi de livres disponibles
satisfait ou remboursé
Satisfait ou remboursé
Paiement sécurisé
modes de paiement
Paiement à l'expédition
partout dans le monde
Livraison partout dans le monde
Service clients sav@commande.eyrolles.com
librairie française
Librairie française depuis 1925
Recevez nos newsletters
Vous serez régulièrement informé(e) de toutes nos actualités.
Inscription