
Résumé
A definitive and up-to-date handbook of semiconductor
devices
Semiconductor devices, the basic components of integrated
circuits, are responsible for the rapid growth of the
electronics industry over the past fifty years. Because
there is a growing need for faster and more complex systems
for the information age, existing semiconductor devices are
constantly being studied for improvement, and new ones are
being continually invented. As a result, a large number of
types and variations of devices are available in the
literature. The Second Edition of this unique engineering
guide continues to be the only available complete
collection of semiconductor devices, identifying 74 major
devices and more than 200 variations of these
devices.
As in the First Edition, the value of this text lies in its
comprehensive, yet highly readable presentation and its
easy-to-use format, making it suitable for a wide range of
audiences.
- Essential information is presented for a quick, balanced overview
- Each chapter is designed to cover only one specific device, for easy and focused reference
- Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications
Contents
- 1 p-n Junction Diode
- 2 p-i-n Diode
- 3 Schottky-Barrier Diode
- 4 Planar-Doped-Barrier (PDB) Diode
- 5 Isotype Heterojunction
- 6 Tunnel Diode
- 7 Transferred-Electron Device (TED)
- 8 Resonant-Tunneling Diode
- 9 Resonant-Interband-Tunneling (RIT) Diode
- 10 Single-Barrier Tunnel Diode
- 11 Single-Barrier Interband-Tunneling Diode
- 12 Real-Space-Transfer (RST) Diode
- 13 Metal-Insulator-Semiconductor Switch (MISS)
- 14 Planar-Doped-Barrier (PDB) Switch
- 15 Amorphous Threshold Switch
- 16 Heterostructure Hot-Electron Diode (HHED)
- 17 Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode
- 18 Barrier-Injection Transit-Time (BARITT) Diode
- 19 Resistor
- 20 Metal-Oxide-Semiconductor (MOS) Capacitor
- 21 Charge-Coupled Device (CCD)
- 22 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- 23 Junction Field-Effect Transistor (JFET)
- 24 Metal-Semiconductor Field-Effect Transistor (MESFET)
- 25 Modulation-Doped Field-Effect Transistor (MODFET)
- 26 Permeable-Base Transistor
- 27 Static-Induction Transistor (SIT)
- 28 Real-Space-Transfer (RST) Transistor
- 29 Planar-Doped Field-Effect Transistor
- 30 Surface-Tunnel Transistor
- 31 Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET)
- 32 Stark-Effect Transistor
- 33 Velocity-Modulation Transistor (VMT)
- 34 Bipolar Transistor
- 35 Tunneling Hot-Electron-Transfer Amplifier (THETA)
- 36 Metal-Base Transistor
- 37 Bipolar Inversion-Channel Field-Effect Transistor (BICFET)
- 38 Tunnel-Emitter Transistor (TETRAN)
- 39 Planar-Doped-Barrier (PDB) Transistor
- 40 Heterojunction Hot-Electron Transistor (HHET)
- 41 Induced-Base Transistor
- 42 Resonant-Tunneling Bipolar Transistor (RTBT/RBT)
- 43 Resonant-Tunneling Hot-Electron Transistor (RHET)
- 44 Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT)
- 45 Spin-Valve Transistor
- 46 Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor
- 47 Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor
- 48 Silicon-Controlled Rectifier (SCR)
- 49 Insulated-Gate Bipolar Transistor (IGBT)
- 50 Static-Induction Thyristor (SIThy)
- 51 Unijunction Transistor
- 52 Light-Emitting Diode (LED)
- 53 Injection Laser
- 54 Photoconductor
- 55 p-i-n Photodiode
- 56 Schottky-Barrier Photodiode
- 57 Charge-Coupled Image Sensor (CCIS)
- 58 Avalanche Photodiode (APD)
- 59 Phototransistor
- 60 Metal-Semiconductor-Metal (MSM) Photodetector
- 61 Quantum-Well Infrared Photodetector (QWIP)
- 62 Quantum-Dot Infrared Photodetector (QDIP)
- 63 Blocked-Impurity-Band (BIB) Photodetector
- 64 Negative-Electron-Affinity (NEA) Photocathode
- 65 Photon-Drag Detector
- 66 Self-Electrooptic-Effect Device (SEED)
- 67 Bistable Etalon
- 68 Solar Cell
- 69 Electroabsorption Modulator
- 70 Thermistor
- 71 Hall Plate
- 72 Strain Gauge (Gage)
- 73 Interdigital Transducer (IDT)
- 74 Ion-Sensitive Field-Effect Transistor (ISFET)
- App. A Selected Nonsemiconductor Devices
- App. B Physical Phenomena
- App. C General Applications of Device Groups
- App. D Physical Properties
- App. E: Background Information
L'auteur - Kwok K. Ng
Agere Systems
Murray Hill, New Jersey
Caractéristiques techniques
PAPIER | |
Éditeur(s) | Wiley |
Auteur(s) | Kwok K. Ng |
Parution | 22/08/2002 |
Nb. de pages | 576 |
Format | 16 x 24 |
Couverture | Broché |
Poids | 1185g |
Intérieur | Noir et Blanc |
EAN13 | 9780471202400 |
ISBN13 | 978-0-471-20240-0 |
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