Impurities in Semiconductors
Solubility, Migration and Interactions
435 pages, parution le 23/02/2004
Résumé
This monograph explores the behavior of impurity atoms in semiconductors, integrating experimental data with their theoretical interpretation. The author begins by clearly explaining the basic physics of hydrogen-like impurities, atoms with partially filled electron shells, and amphoteric, isovalent, and gas-forming impurities to help readers understand the properties imparted by these impurities. The author also analyzes the macroscopic and microscopic mechanisms of the solubility and migration of impurities and defects in the crystal lattice. This book brings to light work done in the former Soviet Union and highlights several impurities that have potential, but have not yet found widespread application.
- Fills a gap in the literature for a book based on practical issues rather than theory
- Combines, in a single volume, results currently disseminated in many specialist publications
- Presents an overview of the behavior of impurities in semiconductors on both a microscopic and macroscopic scale
- Includes a great deal of previously obscure information from Russia and Eastern-bloc countries
L'auteur - Victor I. Fistul
M. V. Lomonosov Academy of Fine Chemical Technology, Russia
Sommaire
- The Semiconductor-Impurity System
- The Semiconductor Crystal as a Thermodynamic System
- Thermodynamic Descriptions of Impurity Solubility
- General Characteristics of Impurity Centers
- References
- Impurity Behavior in Semiconductors
- Hydrogen-Like Impurities
- Impurities with Partly Filled Electron Shells (d- and f-Impurities)
- Amphoteric Impurities
- Isovalent Impurities
- Volatile Impurities
- Impurity Solubility in Semiconductors
- Retrograde Solubility of Impurities
- Solubility of Hydrogen-Like Impurity Atoms in Germanium and Silicon
- Hydrogen-Like Impurity Solubility in AIII BV Compounds
- Solubility of Deep Impurities
- Solubility of Amphoteric Impurities
- Microscopic Analysis of Impurity Solubility in Semiconductors
- Dissolution Enthalpy Calculation by Weisserís Method
- Dissolution Enthaply in the Pseudo-Alloy Model
- Solubility of Interstitial f-Atoms in Silicon
- On Solubility Theory for Semiconductor Compounds
- Charge Interaction
- Potential Interaction
- Defect Interaction in Regular Approximation
- Interaction Leading to Complexation
- Defect Ionization in Solids
- Association of Impurity Atoms
- Ion Pairs
- Polytropic Impurities
- Complexation Thermodynamics in a Semiconductor Compound
- Impurity-Vacancy Complexes in AIII B V Compounds
- Impurity-Vacancy Complexes in Silicon
- Impurity Syneresis
- Combined Complexation
- Indirect Ion-Ion Interaction
- Applied Aspects of Complexation
- Impurity Kinetics in Semiconductors
- Impurity Migration Energy
- Microscopic Theory of Impurity Kinetics
- Dissociative Diffusion of Impurities
- Kinetic Effects in Subsurface Layers
- Diffusion Profiles of Interacting Impurities
- Impurity Migration in the Formation of Mobile Complexes
- Diatomic Complexes: Formation and Decomposition
- Diffusion Model for Mobile Complexes
- Solution of Diffusion Equations for Various Boundary Conditions
- Diffusion Theory Versus Experiment
- References
- Subject Index.
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Caractéristiques techniques
| PAPIER | |
| Éditeur(s) | CRC Press (Taylor and Francis Group) |
| Auteur(s) | Victor I. Fistul |
| Parution | 23/02/2004 |
| Nb. de pages | 435 |
| Format | 16 x 24 |
| Couverture | Relié |
| Poids | 765g |
| Intérieur | Noir et Blanc |
| EAN13 | 9780415308311 |
| ISBN13 | 978-0-415-30831-1 |
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